GaN power transistors boost performance

GAN SYSTEMS GS-065 low current (3.5A to 11A) transistor line leverages firm’s technology leadership in 650V enhancement mode GaN HEMTs. Devices are packaged in thermally efficient, low cost PDFN packages with small 5.0 x 6.0 mm footprint. Device ratings are 3.5 A, 8 A, and 11 A, ranging in RDS(on) from 500 mΩ to 150 mΩ. Design benefits include low inductance, 5×6 footprint, and the three parts in the same footprint. Devices are suitable to sub-1kW power applications.